molecular beam epitaxy

ZnO films can be deposited by a variety of deposition techniques. Magnetron sputtering, metal-organic chemical vapor deposition, pulsed laser deposition, molecular beam epitaxy and reactive e-beam evaporation are main methods for the preparation of high-quality ZnO films with strong c-axis orientation.

在已开发的众多生长技术中，磁控溅射、金属有机物气相沉积、脉冲激光沉积、分子束外延、电子束反应蒸镀法是生长出高度c轴择优取向优质薄膜的主要方法。

New C-V characteristic of Si PN diodes prepared by molecular beam epitaxy

单边分子束外延硅pn结C-V关系的新特点

Chromium oxide films grown by molecular beam epitaxy on MgO ( 001) substrates were characterized by x_ray diffraction ( XRD) and x_ray reflectivity ( XRR) measurements.

采用分子束外延技术（MBE）在MgO（001）基板上沉积了氧化铬薄膜，并利用x射线衍射（XRD）和x射线反射谱（XRR）对薄膜的晶体结构进行了表征。

The local structures of Pt thin films grown by molecular beam epitaxy with the thickness range from 3 to 105 nm have been studied by the grazing incidence fluorescence XAFS technique.

利用荧光X射线吸收精细结构（XAFS）技术研究了厚度为3&105nm范围的分子束外延生长的Pt金属薄膜的局域结构。

Structure and properties of InGaP/ GaAs epilayers grown by solid-source molecular beam epitaxy with a GaP decomposition source

分解GaP源固态分子束外延生长InGaP/GaAs的结构和性能

BaTiO 3 ( BTO ) ferroelectric thin films were deposited directly on Si ( 100 ) single crystal substrates with laser molecular beam epitaxy ( LMBE ).

利用激光分子束外延(LMBE ) 方法在Si ( 100 ) 基片上直接生长BaTiO3 ( BTO ) 铁电薄膜.

Topmost surface and growth mechanism of batio_3 thin film grown by laser molecular beam epitaxy

激光分子束外延BaTiO3薄膜最顶层表面原子平面与薄膜生长机理

Room temperature Raman scattering in cdte/ znte superlattice grown by molecular beam epitaxy

分子束外延生长CdTe/ZnTe超晶格室温喇曼散射

Progress in surface oval Defects Study on molecular beam epitaxy grown materials

分子束外延材料表面椭圆缺陷的研究进展

The growth by Molecular beam epitaxy ( MBE) enables the realization and control of atomically flat and chemically abrupt heterointerfaces.

分子束外延（MBE）能够实现原子量级浮动和化学成分突变的异质界面。

Step-Like Morphology Surfaces Formed by Atomic Hydrogen Assisted Molecular Beam Epitaxy

原子氢辅助分子束外延生长台阶状表面形貌的研究